| 摘要 |
The present invention relates to a thin film deposition apparatus and a controlling method thereof. According to the present invention, the thin film deposition apparatus performs a deposition process by forming multiple gas supply parts,which supply plasma and source gas, along a predetermined closed path where multiple substrates move. The substrate is located in the same point on the closed path when the deposition process starts and ends, or located on a start point on the closed path when the deposition process starts and an end point facing the start point along the closed path when the deposition process ends. [Reference numerals] (AA) Substrate #10;(BB) Substrate #9;(CC) Substrate #8;(DD) Substrate #7;(EE) Substrate #6;(FF) Gas supply unit A;(GG) Gas supply unit B;(HH) Gas supply unit C;(II) Gas supply unit D;(JJ) Gas supply unit E;(KK) Gas supply unit F;(LL) Substrate #1;(MM) Substrate #2;(NN) Substrate #3;(OO) Substrate #4;(PP) Substrate #5 |
