| 摘要 |
<p>An SRAM cell includes a first pull up transistor and a second pull up transistor, a first pull down transistor forming a cross-latched invertor with the first pull up transistor and the second pull up transistor and a second pull down transistor. A conductive feature part includes a first leg in a first longitudinal direction. The first leg is interconnected to the drain of the first pull up transistor and the drain of the first pull down transistor. The conductive feature part further includes a second leg in a second extension direction. The first longitudinal direction is not vertical to the second extension direction and not parallel to the second extension. The second leg is interconnected to the drain of the pull up transistor and the gate of the second pull up transistor.</p> |
