| 摘要 |
The present invention relates to a semiconductor device for measuring a developing time and a driving method thereof, the semiconductor device comprising: an internal voltage generation unit configured to generate an internal voltage in response to an enable signal and a voltage setting code; an enable setting logic unit configured to define a generation start time point of the internal voltage in response to the enable signal and the voltage setting code; a comparison unit configured to compare the internal voltage with a reference voltage for comparison, and define a generation complete time point of the internal voltage according to the comparison result; a measurement result signal generation unit configured to output, as a measurement result signal, a developing time of the internal voltage corresponding to a voltage level duration defined by the voltage setting code in response to an output signal of the enable setting logic unit and an output signal of the comparison unit; and a pad configured to provide a measurement result signal to the outside. [Reference numerals] (210) Internal reference voltage generation unit; (220) Enable setting logic unit; (231) Distribution voltage generation unit; (233) Selection unit; (240) Comparison unit; (260) Pad |
