| 摘要 |
A method for detection of p-n junction surface breakdown consists in that measurements of volt-ampere characteristic of reverse current of the p-n junction are carried out, and by that characteristic breakdown voltage is determined. The measurements are carried out two times: at first measurement the p-n junction under investigation is placed to dry air, and at second measurement it is placed to container with air and humid ammonia vapor with partial pressure from 1 to 200 Pa, this makes it possible to determine through comparison of the measured values of breakdown voltage if the breakdown takes place on the surface of the p-n junction, or in the volume of the crystal. |
