| 摘要 |
<p>To provide a process and apparatus whereby a fluorinated organosilicon compound thin film having high durability can be produced, and a film formation step can be carried out continuously. A process for producing a fluorinated organosilicon compound thin film, which comprises the following steps (a) to (c) sequentially in this order, and an apparatus useful for the process: (a) a heating step of heating a fluorinated organosilicon compound in a heating container to a vapor deposition initiation temperature, (b) a pretreatment step of discharging a vapor from the fluorinated organosilicon compound after reaching the vapor deposition initiation temperature, and (c) a deposition step of forming a fluorinated organosilicon compound thin film by supplying a vapor of the fluorinated organosilicon compound after the pretreatment step on a substrate in a vacuum chamber.</p> |
