| 摘要 |
<p>Provided are a light-emitting diode which prevents degradation of reflectance and which enables high-luminosity light emission, and its manufacturing method. Such a light-emitting diode includes a substrate (1) upon which are provided, in this order, a reflecting layer (6), a transparent film (8) wherein multiple ohmic contract electrodes (7) are embedded at intervals, and a compound semiconductor layer (10) including a current diffusion layer (25) and a light-emitting layer (24) in this order. The periphery of the surface of each ohmic contact electrode (7) on the substrate (1) side are covered by the transparent film (8), and the ohmic contact electrodes (7) contact the reflecting layer (6) and the current diffusion layer (25).</p> |
