MASK FOR EXTREM ULTRA VIOLITE LITHOGRAPGHY AND METHOD FOR FABRICATING THE SAME, METHOD FOR CORRECTING MASK REGISTRATION ERROR

摘要

The photo mask for extreme ultraviolet lithography of the present invention comprises a substrate, a reflecting layer placed on the substrate and reflecting the extreme ultraviolet rays, a capping layer placed on the reflecting layer, an absorption layer placed on the capping layer and absorbing the extreme ultraviolet rays, and a conductive film arranged on the back side of the substrate in a mesh form to partially expose the substrate.