发明名称 MEMORY DEVICES WITH ENHANCED ISOLATION OF MEMORY CELLS, SYSTEMS INCLUDING SAME AND METHODS OF FORMING SAME
摘要 Memory cells of a memory device including a variable resistance material have a cavity between the memory cells. Electronic systems include such memory devices. Methods of forming a memory device include providing a cavity between memory cells of the memory device.
申请公布号 KR101359837(B1) 申请公布日期 2014.02.07
申请号 KR20127009989 申请日期 2010.09.10
申请人 发明人
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
代理机构 代理人
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