| 摘要 |
<p>#CMT# #/CMT# The method involves providing a handle substrate comprising a seed substrate (1), a weakened sacrificial polysilicon layer (2) covering the seed substrate and an intermediate layer placed between the seed substrate and the sacrificial layer to support adhesion of material forming the sacrificial layer with the seed substrate. The handle substrate is joined with a carrier substrate. The carrier substrate is processed. The handle substrate at the sacrificial layer is detached to form a semiconductor structure. Residues of the sacrificial layer present on the seed substrate are withdrawn. #CMT# : #/CMT# The initial substrate is a crystalline substrate, an amorphous substrate, a partially crystalline substrate, a ceramic substrate or metallic substrate. An independent claim is also included for a handle substrate. #CMT#USE : #/CMT# Method for manufacturing a semiconductor structure that is utilized for electronic, optical or microelectronic applications. #CMT#ADVANTAGE : #/CMT# The method enables choosing a material of the seed substrate from wide range of materials. The method enables recycling a remaining part of the handle substrate in an easy manner after performing a detaching process by performing simple selective etching of the sacrificial layer in a cost-effective manner than by a polishing-based recycling technique. The method enables ensuring that the recycling does not reduce thickness of the handle substrate as the handle substrate is covered with the sacrificial layer, so that the handle substrate is infinitely reused, thus saving cost when compared to process of transferring and recycling a part of the silicon handle substrate. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a side view of a handle substrate. 1 : Seed substrate 2 : Weakened sacrificial polysilicon layer.</p> |
