NON-OXYGEN CONTAINING SILICON-BASED FILMS AND METHODS OF FORMING THE SAME

摘要

The present invention relates to a non-oxygen containing silicon-based film and a forming method for the same. The non-oxygen containing silicon-based film includes silicon exceeding 50 atomic weights. A non-oxygen containing silicon-based film according to an aspect of the present invention includes SixCyHz (including approximately 51-100 atomic weight of x and 0-50 atomic weight of y, and 0-50 atomic weight of z. The contents are measured by X-ray photoelectron spectroscopy (XPS)). A non-oxygen containing silicon-based film according to one embodiment of the present invention is deposited by at least one organo silicon precursor having two SiH3 groups having at least one C2-3 connection group between silicon atoms, for example, 1, 4-disilabutane.