ENHANCEMENT NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

An enhancement nitride semiconductor device and a manufacturing method thereof are disclosed. Embodiments of the present invention solve problems in an existing recess gate etching process and an existing insulating film coating process which are exposed to air and improve stability and leakage current characteristics of the enhancement nitride semiconductor device. The embodiments of the present invention prevent a recess etching surface from being in contact with air by depositing a boron nitrite which has high electric insulation and a recess gate process by inductive coupled plasma (ICP) etching equipment and are able to simplify a manufacturing process and reduce a time by not performing a cleaning and patterning again. The embodiments of the present invention not only prevent an exposure to air by performing a coating in a chamber immediately after an etching and but also reduce a leakage current and improve the stability of a device and the stability of a device manufacturing process by using the boron nitrite which has excellent electronic insulation as the gate insulating film. [Reference numerals] (AA) Start; (BB) End; (S10) Form a buffer layer on a substrate; (S20) Form a barrier layer on the buffer layer; (S21) Form a cap layer on the barrier layer; (S30) Form a source electrode and a drain electrode; (S40) Form a recess area; (S50) Form a gate insulating film layer in an in-situ recess area; (S60) Form a gate electrode on the gate insulating film layer