| 摘要 |
A magneto-resistive element has a memory layer, which has magnetic anisotropy along a direction perpendicular to its surface and variable magnetization directions, a reference layer, which has magnetic anisotropy along a direction perpendicular to its surface and a fixed magnetization direction, and a tunnel barrier layer, which is formed between the memory layer and the reference layer. The memory layer is composed of Co1-xFexB, where 0.4@x<0.6 and the thickness is 0.7 nm or more but less than 1.0 nm; or where 0.6@x<0.8 and the thickness is 0.7 nm or more but less than 1.1 nm; or where 0.8@x<1.0 and the thickness is 0.9 nm or more but less than 1.2 nm. |
