| 摘要 |
Disclosed is a light emitting diode having a band slope layer formed on an area in contact with a multi-quantum well layer which emits light. The band slope layer is formed on the upper and lower parts of the multi-quantum well layer. The band slope layer has a lower band gap than that of a barrier layer composing the multi-quantum well layer and has a value greater than the band gap of the well layer. When a forward bias is applied, excited electrons and holes are bounded in the well layer by tunneling the barrier layer. As a result, internal quantum efficiency can be increased continuously even when a high current is applied. |
