发明名称 Method and Structure for Integrating Capacitor-less Memory Cell with Logic
摘要 Methods for fabricating integrated circuits include fabricating a logic device on a substrate, forming an intermediate semiconductor substrate on a surface of the logic device, and fabricating a capacitor-less memory cell on the intermediate semiconductor substrate. Integrated circuits with capacitor-less memory cells formed on a surface of a logic device are also disclosed, as are multi-core microprocessors including such integrated circuits.
申请公布号 US2014038367(A1) 申请公布日期 2014.02.06
申请号 US201314048249 申请日期 2013.10.08
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU GURTEJ S.
分类号 H01L27/108 主分类号 H01L27/108
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