| 摘要 |
A method for fabricating a plurality of opto-electronic semiconductor chips (1) is specified in which a semiconductor layer sequence having an active region (20), which is provided for the purpose of producing and/or receiving radiation and is arranged between a first semiconductor layer (21) and a second semiconductor layer (22), is deposited on a growth substrate (29). The semiconductor layer sequence is mounted on a support (5). A plurality of recesses (6) that extend through the support, the second semiconductor layer and the active region into the first semiconductor layer is produced. On a first main face (51) of the support that is averted from the semiconductor layer sequence, first contacts (8) are produced that are each electrically conductively connected to the first semiconductor layer in the region of the recesses. The support with the semiconductor layer sequence is singularized into the plurality of opto-electronic semiconductor chips, each semiconductor chip having at least one recess. In addition, an opto-electronic semiconductor chip is specified. |
