| 摘要 |
An apparatus and a method for forming a thin film are provided to improve productivity by shortening a reaction time of a source gas and a reaction gas. An apparatus for forming a thin film includes a substrate loading unit and a gas spray unit. The substrate loading unit(120) is included inside a chamber(110), and is rotated. A plurality of substrates(100) is loaded on the substrate loading unit. The gas spray unit(130) is included on a top part inside the chamber, and includes a plurality of gas spray parts(132) which sprays a source gas, a purge gas, and a reaction gas. Source gas spray parts(140,150) spray at least two or more source gases, and are symmetrical each other. A reaction gas spray part(160) is included between the source gas spray parts. A purge gas spray part(170) is included between the source gas spray part and the reaction gas spray part. |
