RESISTIVE SWITCHING ELEMENT AND USE THEREOF

摘要

A bipolar resistive switching device (RSM device, figure 35) comprises an electrically conductive bottom electrode (BE, figure 35); a stack of transition metal oxides layers (RSM, figure 35), a number of transition metal oxide layers (RSO, figure 35) being equal or greater than 2, the stack comprising: at least one MOx layer (RSOA, figure 35), at least one oxygen gettering layer NOy (RSOB, figure 35). The resistive switching device further comprises an electrically conductive top electrode (TE, figure 35).