MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STORAGE LAYERS

摘要

A synthetic antiferromagnetic device includes a reference layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer, and a first ruthenium layer disposed on cobalt iron boron layer, the first ruthenium layer having a thickness of approximately 0 � to 32 �.