| 摘要 |
Disclosed is a method for manufacturing a silicon nitride thin film comprising a step of charging silane, ammonia gas and nitrogen gas at an environment temperature below 350°C so as to produce and precipitate a silicon nitride thin film, wherein the rate of silane charging is 300-350 sccm, the rate of ammonia charging gas is 1000 sccm, the rate of nitrogen gas charging is 1000 sccm; the power of a high frequency source is 0.15-0.30 KW and the power of a low frequency source is 0.15-0.30 KW; the reaction pressure is 2.3-2.6 Torr; and the reaction duration is 4-6 s. The above-mentioned method for manufacturing a silicon nitride thin film gives a relatively good parameter range and preferred parameters for producing a low stress silicon nitride thin film at low temperatures, achieves the manufacture of a low stress silicon nitride thin film at low temperatures and can better satisfy the scenarios requiring a low stress silicon nitride thin film. |
