APPARATUS FOR DETECTING AN ETCHING END POINT AND METHOD OF DETECTING AN ETCHING END POINT

摘要

An apparatus for detecting an etching end point include a process space for performing an etching process on a substrate and a process chamber having a window, a power applying part making a reaction gas plasma in the process space, a luminous spectrometer detecting a first preliminary etching end point by using a beam emitted from the etching process in the chamber through a window, an impedance analyzer detecting a second preliminary etching end point by measuring the impedance in the chamber, and a comparison analyzer determining an etching end point by comparing the first and the second preliminary end point. [Reference numerals] (110) Process chamber; (121) RF power source; (123) Matching box; (130) Luminescence spectrometer; (140) Impedance analyzer; (151) Comparison analyzer; (153) Analyzer; (155) Controller