| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method which reduces the likelihood that an etching rate is deteriorated by formation of an SiOfilm.SOLUTION: The invention relates to an etching method for etching a silicon wafer 11. The etching method includes: a deaeration process 54 step where an etchant from an etchant supply source 52 is deaerated; and an etching step where the etchant deaerated in the deaeration process step is supplied to a rear surface of the silicon wafer to etch the silicon wafer. |
