| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem with a photoelectric conversion device that because a terminal section which becomes an area to be electrically connected with the outside of the photoelectric conversion device is exposed to a photodiode dry etching atmosphere and a passivation layer hydrofluoric acid-containing wet etching atmosphere, etc. during its manufacturing process, and also exposed to a plasma ashing atmosphere associated with resist separation in each process, damage to the surface of the terminal section caused by etching is accumulated, giving rise to increase in contact resistance, degradation in adhesion, and other defects.SOLUTION: A terminal section 10B is composed of a conductive metal layer 210 using AlNd alloy and an etching resistant layer 211 containing TiN, Mo or Cr as main components. The conductive metal layer 210 using AlNd alloy is small in electrical resistance, and has high conductivity. As opposed to it, the etching resistant layer 211 is resistive to both dry and wet atmospheres and therefore has its surface roughness caused by etching restrained, making it possible to prevent increase in contact resistance and the occurrence of degradation in adhesion and other defects. |
