COMPOUND SEMICONDUCTOR STRUCTURE

摘要

A semiconductor structure (1) comprises a dielectric layer (2) including a dielectric material having a dielectric constant higher than that of silicon oxide; a channel region (3) including a compound semiconductor material; a passivation layer (4) including a passivation material between the channel region (3) and the dielectric layer (2); and a barrier layer (5) including a barrier material between the dielectric layer (2) and the passivation layer (4) for reducing a chemical reaction of the dielectric material of the dielectric layer (2) with the passivation material of the passivation layer (4).