| 摘要 |
The present invention relates to a power amplifier apparatus and a power amplifier circuit. The power amplifier circuit uses a Doherty circuit structure, uses a High Electron Mobility Transistor (HEMT) power amplifier to implement a Carrier amplifier with the Doherty circuit structure, and uses a Laterally Diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOS) to implement a Peak amplifier. With the power amplifier apparatus and power amplifier circuit of the present invention, the power amplifier efficiency is improved. |
