发明名称 |
NONVOLATILE MEMORY DEVICE USING A THRESHOLD VOLTAGE SWITCHING MATERIAL AND METHOD FOR MANUFACTURING SAME |
摘要 |
The present invention relates to a nonvolatile memory device and to a method for manufacturing same. According to the present invention, the blocking insulation layer of a nonvolatile memory device having a typical SONOS structure is replaced with a threshold voltage switching material, which changes to a low resistance state only while a voltage greater than a threshold voltage is applied while maintaining a high resistance state under normal conditions and returning to the high resistance state when the applied voltage is removed. The present invention performs a program operation by injecting charges from a gate electrode layer into a charge trap layer through an insulation layer formed of the threshold voltage switching material after applying a voltage pulse greater than the threshold voltage to the gate electrode layer. |
申请公布号 |
US2014036585(A1) |
申请公布日期 |
2014.02.06 |
申请号 |
US201113876136 |
申请日期 |
2011.08.17 |
申请人 |
KIM TAEGEUN;AN HOMYOUNG;KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION |
发明人 |
KIM TAEGEUN;AN HOMYOUNG |
分类号 |
H01L29/792;G11C11/34;H01L29/66 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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