发明名称 ENHANCED ETCH AND DEPOSITION PROFILE CONTROL USING PLASMA SHEATH ENGINEERING
摘要 A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
申请公布号 US2014034611(A1) 申请公布日期 2014.02.06
申请号 US201314055121 申请日期 2013.10.16
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 GODET LUDOVIC;MILLER TIMOTHY;PAPASOULIOTIS GEORGE;SINGH VIKRAM
分类号 B44C1/22 主分类号 B44C1/22
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