SAPPHIRE SINGLE CRYSTAL GROWTH FURNACE WITH ZIRCONIA POWDER TYPED HEAT

摘要

The present invention relates to a single crystal growth furnace including a heat-shielding wall composed of zirconia powder and more particularly, to a single crystal growth furnace including a heat-shielding wall composed of zirconia powder, wherein the heat-shielding wall composed of zirconia powder envelops a crucible so as to obtain high-purity sapphire single crystal by preventing foreign materials such as calcium and barium, which are leaked from fireproof bricks, from affecting growing sapphire when growing sapphire single crystal at a high temperature after inputting aluminum hydroxide crystal into the growth furnace. The present invention can prevent the deterioration of a product by volatile foreign materials during the growth of sapphire single crystal and can grow high-purity sapphire single crystal by completely preventing the inflow of foreign materials because the present invention does not include calcium ions or barium ions which can be used as foreign materials during the growth of sapphire single crystal as the calcium ions or barium ions are volatilized in a high-temperature environment at a temperature of 2000°C or higher for growing sapphire single crystal.