NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF USING THE SAME

摘要

PROBLEM TO BE SOLVED: To quickly precharge a bit line to reduce a period of time to the start of reading.SOLUTION: A nonvolatile semiconductor memory device comprises: a plurality of cell units arranged in matrix on a memory cell region; bit lines each arranged in an extending direction of the plurality of cell units and connected to a drain of one selection gate transistor of each cell unit; source lines each arranged in a direction orthogonal to the plurality of cell units and connected to a source of the other selection gate transistor of each cell unit; and a bit line charge/discharge transistor provided adjacent to a contact connected to the bit line in a drain side region of at least one selection gate transistor of the plurality of cell units and charging/discharging the bit line.