发明名称 CMOS IMAGE SENSOR SWITCH CIRCUIT FOR REDUCED CHARGE INJECTION
摘要 A switch circuit including structures to reduce the effects of charge injection. In an embodiment, a first transistor of the switch circuit is to receive a first signal and first and second dummy transistors of the switch circuit are each to receive a second signal, wherein the first transistor is connected between the first and second dummy transistors. The second signal is complementary to the first signal. In another embodiment, the first transistor, the first dummy transistor and the second dummy transistors are each connected via respective body connections to a first low supply voltage.
申请公布号 US2014034808(A1) 申请公布日期 2014.02.06
申请号 US201213563181 申请日期 2012.07.31
申请人 ZHANG GUANGBIN;LEE DENNIS;OMNIVISION TECHNOLOGIES, INC. 发明人 ZHANG GUANGBIN;LEE DENNIS
分类号 H03K17/56;H01L27/146 主分类号 H03K17/56
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