SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

The aim of the present invention is to provide a semiconductor device containing a graphene p-n vertical homojunction diode by assessing the optical and electrical characteristics of a graphene p-n junction produced according to doping amount. The semiconductor device includes first graphene having a first type of conductivity, and second graphene, which is arranged on the first graphene and is in contact therewith and which has a second type of conductivity different from the first type of conductivity.