| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition showing high dissolution contrast and having high sensitivity in organic solvent development and to provide a pattern forming method by which a hole pattern or a trench pattern can be formed via positive/negative reversal by organic solvent development.SOLUTION: The pattern forming method comprises: applying a resist composition containing a polymeric compound having a repeating unit in which a hydrogen atom in a carboxyl group is substituted by an acid-labile group expressed by formula (1), and an acid generator if necessary, on a substrate; heating the composition, then exposing the resist film to high energy rays, heating and then dissolving an unexposed part by use of a developing solution comprising an organic solvent to obtain a negative pattern where an exposed part is not dissolved. By this method, high dissolution contrast can be obtained by organic solvent development after exposure and PEB, and a fine hole pattern or a trench pattern can be formed with highly controlled dimensions and high sensitivity. |
