摘要 |
The invention relates to a direct-converting x-ray radiation detector (C3, C5) for detecting x-ray radiation, in particular for use in a CT system (C1), at least having a semiconductor material (1) used for detecting the x-ray radiation, at least one collimator (2) and at least one radiation source (6), which irradiates the semiconductor material (1) with additional radiation, wherein the at least one collimator (2) has at least one reflection layer (3) on a side facing the semiconductor material (1), on which the additional radiation is reflected to the semiconductor material (1). The invention further relates to a CT system having a direct-converting x-ray radiation detector (C3, C5) and a method for detecting incident x-ray radiation by means of a direct-converting x-ray radiation detector (C3, C5), in particular for use in a CT system (C1), wherein a semiconductor material (1) used for detection is indirectly irradiated with additional radiation by means of at least one reflection layer (3) in order to generate additional charge carriers. |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
KAPPLER, STEFFEN;KREISLER, BJOERN;LABAYEN DE INZA, MIGUEL;NIEDERLOEHNER, DANIEL;REINWAND, MARIO;SCHROETER, CHRISTIAN;TONN, JUSTUS;WIRTH, STEFAN;DIERRE, FABRICE;STIERSTORFER, KARL;KRAFT, EDGAR;HACKENSCHMIED, PETER;STRASSBURG, MATTHIAS |