| 摘要 |
1,273,097. Hollow bodies of semi-conductor material. SIEMENS A.G. 24 Aug., 1970 [26 Aug., 1969], No. 40616/70. Heading B5A. [Also in Divisions C1 and F2] A hollow body e.g. a tube of semi-conductor material open at least at one end, is prepared by depositing the semi-conductor material e.g. silicon, silicon carbide, germanium from a reaction gas on to a heated carrier body. The carrier body being composed of a material other than the semi-conductor material e.g. graphite and having a higher coefficient of thermal expansion than the semi-conductor material; raising the temperature of the carrier body during the deposition such that cracks appear in the layer of semi-conductor material until the cracks have been covered and thereafter removing the carrier body from the hollow body after cooling.
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