发明名称 PATTERNING OF HARD-TO-DRY-ETCH SUBSTRATES
摘要 A hard-to-dry-etch material may be patterned by forming a layer of dry-etchable material on a surface of the hard-to-dry etch substrate, and dry etching the dry-etchable material. The hard-to-dry etch substrate produces substantial quantities of non-volatile etch byproducts that redeposit when subject to the dry etching. The dry-etchable material has similar material properties to the hard-to-dry-etch substrate material is formed. The dry-etchable material is one that does not produce substantial quantities of non-volatile etch byproducts that redeposit when the dry-etchable material is subject to the dry etching. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
申请公布号 US2014037920(A1) 申请公布日期 2014.02.06
申请号 US201213564637 申请日期 2012.08.01
申请人 KOBRIN BORIS;ROLITH, INC. 发明人 KOBRIN BORIS
分类号 B44C1/22;B32B3/10;C03C25/68 主分类号 B44C1/22
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