发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND PATTERN LAYOUTING METHOD FOR THE SAME
摘要 A semiconductor integrated circuit and a pattern lay-outing method for the same are disclosed, which can suppress bending or partial drop-out of a dummy pattern even when a mechanical stress acts on the dummy pattern in CMP. The semiconductor integrated circuit includes predetermined functional areas and a dummy pattern formed in a space area. The space area is positioned between predetermined functional areas. The dummy pattern includes a first metal portion formed in the shape of a frame and defining an outer edge of the dummy pattern, a second metal portion positioned on an inner periphery side of the first metal portion and formed so as to be continuous with the first metal portion, and a plurality of non-forming areas positioned in an area where the second metal portion is not formed on the inner periphery side of the first metal portion.
申请公布号 US2014035108(A1) 申请公布日期 2014.02.06
申请号 US201313975823 申请日期 2013.08.26
申请人 RENESAS ELECTRONICS CORPORATION 发明人 KAMON KAZUYA
分类号 H01L23/544;G06F17/50 主分类号 H01L23/544
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