| 摘要 |
An electronic device can include a semiconductor layer, and a trench extending into the semiconductor layer and having a tapered shape. In an embodiment, the trench includes a wider portion and a narrower portion. The electronic device can include a doped semiconductor region that extends to a narrower portion of the trench and has a dopant concentration greater than a dopant concentration of the semiconductor layer. In another embodiment, the electronic device can include a conductive structure within a relatively narrower portion of the trench, and a conductive electrode within a relatively wider portion of the trench. In another embodiment, a process of forming the electronic device can include forming a sacrificial plug and may allow insulating layers of different thicknesses to be formed within the trench. |
