发明名称 SPUTTERING TARGET FOR FORMING Cu ALLOY THIN FILM, AND METHOD FOR MANUFACTURING SAME
摘要 <p>Provided is a sputtering target used for forming a Cu-Mn alloy thin film useful as, for example, an electrode film for a display device such as a liquid crystal display, wherein the number of abnormally coarse cluster particles during sputtering is reduced and generation of particles and splashes is minimized. Also provided is a method for manufacturing the sputtering target. This sputtering target for forming a Cu alloy thin film is a Cu alloy sputtering target containing at least Mn at an amount of 2-20 atom%, the Vickers hardness in a t/2 cross-section in the thickness direction of the sputtering target being controlled to 50-100 HV.</p>
申请公布号 WO2014021173(A1) 申请公布日期 2014.02.06
申请号 WO2013JP70098 申请日期 2013.07.24
申请人 KOBELCO RESEARCH INSTITUTE, INC. 发明人 GOTO, HIROSHI;MATSUZAKI, HITOSHI
分类号 C23C14/34;H01L21/285 主分类号 C23C14/34
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