发明名称 |
SPUTTERING TARGET FOR FORMING Cu ALLOY THIN FILM, AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>Provided is a sputtering target used for forming a Cu-Mn alloy thin film useful as, for example, an electrode film for a display device such as a liquid crystal display, wherein the number of abnormally coarse cluster particles during sputtering is reduced and generation of particles and splashes is minimized. Also provided is a method for manufacturing the sputtering target. This sputtering target for forming a Cu alloy thin film is a Cu alloy sputtering target containing at least Mn at an amount of 2-20 atom%, the Vickers hardness in a t/2 cross-section in the thickness direction of the sputtering target being controlled to 50-100 HV.</p> |
申请公布号 |
WO2014021173(A1) |
申请公布日期 |
2014.02.06 |
申请号 |
WO2013JP70098 |
申请日期 |
2013.07.24 |
申请人 |
KOBELCO RESEARCH INSTITUTE, INC. |
发明人 |
GOTO, HIROSHI;MATSUZAKI, HITOSHI |
分类号 |
C23C14/34;H01L21/285 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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