发明名称 |
METHOD OF MANUFACTURING REFLECTION MASK FOR EUV EXPOSURE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing reflection mask for EUV exposure capable of obtaining high inspection sensitivity during appearance defect inspection of a reflection mask for EUV exposure by suppressing excessive defect inspection due to shot error of an electron beam.SOLUTION: In the mask pattern drawing for forming a plurality of die patterns by performing electron beam drawing of a resist on a reflection mask blank for EUV exposure, the mask pattern of a reflection mask for EUV exposure has a plurality of the same die patterns including a die pattern for inspection and a die pattern for comparison. Drawing is carried out while shifting the position of shot partition of the electron beam for inspection die pattern and comparison die pattern. |
申请公布号 |
JP2014027065(A) |
申请公布日期 |
2014.02.06 |
申请号 |
JP20120165292 |
申请日期 |
2012.07.26 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
ABE TSUKASA;NAITO YUKIE;INAZUKI YUICHI |
分类号 |
H01L21/027;G03F1/24 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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