发明名称 METHOD OF MANUFACTURING REFLECTION MASK FOR EUV EXPOSURE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing reflection mask for EUV exposure capable of obtaining high inspection sensitivity during appearance defect inspection of a reflection mask for EUV exposure by suppressing excessive defect inspection due to shot error of an electron beam.SOLUTION: In the mask pattern drawing for forming a plurality of die patterns by performing electron beam drawing of a resist on a reflection mask blank for EUV exposure, the mask pattern of a reflection mask for EUV exposure has a plurality of the same die patterns including a die pattern for inspection and a die pattern for comparison. Drawing is carried out while shifting the position of shot partition of the electron beam for inspection die pattern and comparison die pattern.
申请公布号 JP2014027065(A) 申请公布日期 2014.02.06
申请号 JP20120165292 申请日期 2012.07.26
申请人 DAINIPPON PRINTING CO LTD 发明人 ABE TSUKASA;NAITO YUKIE;INAZUKI YUICHI
分类号 H01L21/027;G03F1/24 主分类号 H01L21/027
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