发明名称 Method of Manufacturing a Semiconductor Device including a Dielectric Structure
摘要 A dielectric layer is deposited on a working surface of a substrate, wherein the dielectric layer contains or consists of a dielectric polymer. The dielectric layer is partially cured. A portion of the partially cured dielectric layer is removed using a chemical mechanical polishing process. Then the curing of remnant portions of the partially cured dielectric layer is continued to form a dielectric structure. The partially cured dielectric layer shows high removal rates during chemical mechanical polishing. With remnant portions of the dielectric layer provided in cavities, high volume insulating structures can be provided in an efficient manner.
申请公布号 US2014038413(A1) 申请公布日期 2014.02.06
申请号 US201213566192 申请日期 2012.08.03
申请人 SCHMIDT GERHARD;SCHLOEGL DANIEL;HARTL MARCELLA JOHANNA;KOCH PHILIPP SEBASTIAN;STRASSER ROLAND;INFINEON TECHNOLOGIES AUSTRIA AG 发明人 SCHMIDT GERHARD;SCHLOEGL DANIEL;HARTL MARCELLA JOHANNA;KOCH PHILIPP SEBASTIAN;STRASSER ROLAND
分类号 H01L21/306 主分类号 H01L21/306
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