发明名称 |
Semiconductor Structure and Method for Manufacturing the Same |
摘要 |
A semiconductor structure and a method for manufacturing the same are provided. The method comprises following steps. A first silicon-containing conductive material is formed on a substrate. A second silicon-containing conductive material is formed on the first silicon-containing conductive material. The first silicon-containing conductive material and the second silicon-containing conductive material have different dopant conditions. The first silicon-containing conductive material and the second silicon-containing conductive material are thermally oxidized for turning the first silicon-containing conductive material wholly into an insulating oxide structure, and the second silicon-containing conductive material into a silicon-containing conductive structure and an insulating oxide layer. |
申请公布号 |
US2014035140(A1) |
申请公布日期 |
2014.02.06 |
申请号 |
US201314049253 |
申请日期 |
2013.10.09 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUE HANG-TING;HSIAO YI-HSUAN |
分类号 |
H01L23/485;H01L23/00 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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