| 摘要 |
A resistive random access memory (ReRAM) device can comprise a first metal layer and a first metal-oxide layer on the first metal layer. The first metal-oxide layer comprises the first metal. A second metal layer can comprise a second metal over and in physical contact with the first metal-oxide layer. A first continuous non-conductive barrier layer can be in physical contact with sidewalls of the first metal layer and sidewalls of the first metal-oxide layer. A second metal-oxide layer can be on the second metal layer. The second metal-oxide layer can comprise the second metal layer. A third metal layer can be over and in physical contact with the second metal-oxide layer. The first and second metal-oxide layers, are further characterized as independent storage mediums. |
