| 发明名称 |
SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM |
| 摘要 |
<p>[Problem] To suppress liquefying of a process gas within a process chamber. [Solution] A substrate processing apparatus which comprises: a process chamber for containing a substrate; a gas supply unit for supplying a process gas to the substrate; a cover for closing the process chamber; a heat conductive body that is provided on the cover; and a heat conductive body-heating unit for heating the heat conductive body.</p> |
| 申请公布号 |
WO2014021220(A1) |
申请公布日期 |
2014.02.06 |
| 申请号 |
WO2013JP70341 |
申请日期 |
2013.07.26 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
TATENO, HIDETO;WADA, YUICHI;ASHIHARA, HIROSHI;YAMAZAKI, KEISHIN;USHIDA, TAKUROU;NAKAMURA, IWAO;IZUMI, MANABU |
| 分类号 |
H01L21/31;C23C16/46;H01L21/22;H01L21/316 |
主分类号 |
H01L21/31 |
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