| 摘要 |
<p>The purpose of the present invention is to provide a semiconductor device that is less susceptible to display defects, and a production method therefor. The semiconductor device (100A) of the present invention comprises: a substrate (2), a gate electrode (4) and a pixel electrode (3(m)) that are formed on the substrate (2); a first insulating layer (5) that is formed on the gate electrode (4) and the pixel electrode (3(m)); a semiconductor layer (6) that overlaps with the first insulating layer (5) via the gate electrode (4); and a source electrode (7s) and a drain electrode (7d)that are electrically connected to the semiconductor layer (6). The drain electrode (7d) is arranged on the pixel electrode (3(m)) via an insulating layer that includes the first insulating layer (5), and is connected to the pixel electrode (3(m)) within an opening (5u) formed in the insulating layer.</p> |
