| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide substrate in which polytype is stable and which has fewer defects.SOLUTION: A method for producing a silicon carbide substrate includes the following steps: a step for preparing a growth container 10 where silicon carbide raw material 8, silicon, and a seed substrate 1 having a principal surface 1A are arranged; a step for making the inside of the growth container 10 have a silicon gas atmosphere by heating the silicon, and raising the temperature of the growth container 10 while maintaining a state where the temperature of the silicon carbide raw material 8 is lower than the temperature of the seed substrate 1 under the silicon gas atmosphere; a step of vaporizing the silicon until vaporization of the silicon is completed; and a step for reducing the pressure in the growth container 10 in a state where the temperature of the silicon carbide raw material 8 is higher than the temperature of the seed substrate 1 to grow a silicon carbide crystal 11 on the principal surface 1A of the seed substrate 1. |
