| 发明名称 |
MEMORY DEVICE AND METHOD OF MANUFACTURING MEMORY STRUCTURE |
| 摘要 |
An exemplary memory device includes a substrate and two word lines extending on the substrate. The substrate includes an active area. The two word lines are formed on the active area. Each word line includes a recessed portion corresponding to the active area. The recessed portion is defined by a planar top surface. |
| 申请公布号 |
US2014036565(A1) |
申请公布日期 |
2014.02.06 |
| 申请号 |
US201213565289 |
申请日期 |
2012.08.02 |
| 申请人 |
LIN SHIAN JYH;HUANG JEN JUI;NANYA TECHNOLOGY CORPORATION |
发明人 |
LIN SHIAN JYH;HUANG JEN JUI |
| 分类号 |
H01L21/768;G11C5/06 |
主分类号 |
H01L21/768 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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