发明名称 |
SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURE |
摘要 |
Semiconductor structures and methods of manufacture are disclosed herein. Specifically, disclosed herein are methods of manufacturing a high-voltage metal-oxide-semiconductor field-effect transistor and respective structures. A method includes forming a field-effect transistor (FET) on a substrate in a FET region, forming a high-voltage FET (HVFET) on a dielectric stack over a over lightly-doped diffusion (LDD) drain in a HVFET region, and forming an NPN on the substrate in an NPN region. |
申请公布号 |
US2014035064(A1) |
申请公布日期 |
2014.02.06 |
申请号 |
US201213566404 |
申请日期 |
2012.08.03 |
申请人 |
CLARK, JR. WILLIAM F.;LIU QIZHI;PEKARIK JOHN J.;SHI YUN;ZHANG YANLI;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLARK, JR. WILLIAM F.;LIU QIZHI;PEKARIK JOHN J.;SHI YUN;ZHANG YANLI |
分类号 |
H01L21/8249;H01L27/06 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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