| 摘要 |
A method for reducing defects in an active device area of a semiconductor device during fabrication is disclosed. In one aspect, the method comprises providing the active device area adjacent an isolation structure, wherein a substantially planar surface is formed over the isolation structure and the active device area, forming a patterned stress-inducing layer over the substantially planar surface, forming at least one screening layer between the patterned stress-inducing layer and the substantially planar surface, where the screening layer is configured to screen part of the stress field induced by the patterned stress-inducing layer, performing an anneal process after forming the patterned stress-inducing layer on the substantially planar surface, so as to induce a movement of the defects towards a contact interface between the active device area and the isolation structure, and removing the patterned stress-inducing layer from the substantially planar surface. |
