| 摘要 |
A level shift circuit is provided that includes: latch circuits (Q5, Q6, Q7, Q8) including first inverter circuits (Q5, Q7) and second inverter circuits (Q6, Q8); a first input MOS transistor (Q1) that operates in response to an input signal; a second input MOS transistor (Q2) that operates in response to an inversion signal of the input signal; and a current voltage control MOS transistor (Q9). The latch circuits (Q5, Q6, Q7, Q8) output voltages that have levels obtained by converting the levels of the input voltages. The first and second input MOS transistors (Q1, Q2) receive input signals at gate terminals thereof, and drive the latch circuits (Q5, Q6, Q7, Q8) according to the input signals. The current voltage control MOS transistor (Q9) is provided between the input MOS transistors (Q1, Q2) and the latch circuits (Q5, Q6, Q7, Q8), and receives a supplied control voltage at a gate terminal thereof, so as to be driven according to inversion actions of the latch circuits. |
