SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE

摘要

The present technology pertains to a solid-state imaging device, a method for manufacturing a solid-state imaging device, and an electronic device, with which the sensitivity of each photoelectric conversion part can be optimized in accordance with the wavelength of incident light. This solid-state imaging device is equipped with: a semiconductor substrate having multiple photoelectric conversion parts; a protective layer; a light-blocking film; a reflection prevention adjustment layer; a color filter; and a wiring layer. The protective layer is provided directly on the light-receiving surface of the semiconductor substrate so as to cover the entire light-receiving surface. The light-blocking film is provided on the protective layer, blocking light between the photoelectric conversion parts. The reflection prevention adjustment layer is provided on the upper layer and/or the lower layer of the light-blocking film on top of the protective layer, and has a stepped shape such that the film is made thinner in correspondence with a prescribed photoelectric conversion unit. The color filter is arranged on the reflection prevention adjustment layer in correspondence with the photoelectric conversion units, with the color patterns of the color filter corresponding to the film thickness of the reflection prevention adjustment layer. The wiring layer is provided on the surface of the semiconductor substrate which is opposite the light-receiving surface.