发明名称 |
DEVICE HAVING REDUCED BIAS TEMPERATURE INSTABILITY (BTI) |
摘要 |
A semiconductor device is disclosed along with methods for manufacturing such a device. In certain embodiments, the semiconductor device includes a source electrode formed using a metal that limits a shift. such as due to bias temperature instability, in a threshold voltage of the semiconductor device during operation. In certain embodiments the semiconductor device may be based on silicon carbide. |
申请公布号 |
CA2822663(A1) |
申请公布日期 |
2014.02.06 |
申请号 |
CA20132822663 |
申请日期 |
2013.08.01 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
MICHAEL, JOSEPH DARRYL;ARTHUR, STEPHEN DALEY;JOHNSON, TAMMY LYNN;LILIENFELD, DAVID ALAN |
分类号 |
H01L21/283;H01L29/72;H01L29/74;H01L29/772 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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